A new idea was provided by the group-IV GeSn alloys for short-wave infrared light source compatible with CMOS due to the low cost integrated on the Si platform and can be transformed into direct bandgap alloy. More than 7. 1% Sn content or strain engineering is used to achieve the direct bandgap GeSn semiconductors and enhance the luminous efficiency of GeSn light-emitting devi... https://www.roneverhart.com/HP-15-fd0038ca-15-6-FHD-IPS-Laptop-Intel-Processor-N100-3-40-GHz-Intel-UHD-Graphics-8GB-DDR4-512GB-SSD-Windows-11-Hom/